F1107 - RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Key Features

gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1107.

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F1107 rf power vdmos transistor by Polyfet RF Devices - Datasheet Preview

Datasheet Details

Part number	F1107
Manufacturer	Polyfet RF Devices
File Size	39.61 KB
Description	RF POWER VDMOS TRANSISTOR
Datasheet	F1107 Datasheet

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1107 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 100 Watts Junction to Case Thermal Resistance 1.