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PJM80H04NTE - N-Channel MOSFET

Description

Fast Switching Low RDS(ON) and Gate Charge Low Reverse Transfer Capacitance 100% Single Pluse Avanlanche Energy Test

Features

  • VDS = 800V, ID = 4A.
  • RDS(ON) ＜ 3.6 Ω (@VGS=10V).
  • ESD Protected ＞ 4kV (HBM).
  • MSL: 1 Level.

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Datasheet Details

Part number PJM80H04NTE
Manufacturer Ping Jing
File Size 1.26 MB
Description N-Channel MOSFET
Datasheet download datasheet PJM80H04NTE Datasheet

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Full PDF Text Transcription

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Descriptions  Fast Switching  Low RDS(ON) and Gate Charge  Low Reverse Transfer Capacitance  100% Single Pluse Avanlanche Energy Test Features  VDS = 800V, ID = 4A  RDS(ON) ＜ 3.6 Ω (@VGS=10V)  ESD Protected ＞ 4kV (HBM)  MSL: 1 Level Applications  Power Switch  Adaptor, Charger Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified.
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