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PJM7002NSA - N-Enhancement Field Effect Transistor

Features

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switching.
  • High saturation current capability.
  • High speed switching SOT-23.

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Datasheet Details

Part number PJM7002NSA
Manufacturer Ping Jing
File Size 761.12 KB
Description N-Enhancement Field Effect Transistor
Datasheet download datasheet PJM7002NSA Datasheet

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Full PDF Text Transcription

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PJM7002NSA N-Enhancement Field Effect Transistor Features  High density cell design for low RDS(ON)  Voltage controlled small signal switching  High saturation current capability  High speed switching SOT-23 Application  PWM applications  Load switch  Power management Schematic diagram Drain 3 Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Storage Temperature 1 Gate 2 Source Symbol VDS VGS ID IDM PD TJ TSTG Value 60 ± 20 115 800 200 150 - 55 to + 150 Unit V V mA mA mW OC OC www.pingjingsemi.com Revison：1.
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