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PJM250N40TO - N- Enhancement Mode Field Effect Transistor

Features

  • High density cell design for ultra low RDS(on).
  • Low RDS(ON) and Gate Charge.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number PJM250N40TO
Manufacturer Ping Jing
File Size 651.84 KB
Description N- Enhancement Mode Field Effect Transistor
Datasheet download datasheet PJM250N40TO Datasheet

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Full PDF Text Transcription

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PJM250N40TO N- Enhancement Mode Field Effect Transistor Features ⚫ High density cell design for ultra low RDS(on) ⚫ Low RDS(ON) and Gate Charge ⚫ Excellent package for good heat dissipation Applications ⚫ Power switching application ⚫ Hard switched and high frequency circuits ⚫ Uninterruptible power supply TO-220 1 2 3 Schematic Diagram Drain 2 1 Gate 3 Source Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified.
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