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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAX12 Controlled avalanche diode
Product specification Supersedes data of April 1996 1996 Sep 17
Philips Semiconductors
Product specification
Controlled avalanche diode
FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 90 V • Repetitive peak reverse voltage: max. 90 V • Repetitive peak forward current: max. 800 mA • Repetitive peak reverse current: max. 600 mA • Capable of absorbing transients repetitively.
Marking code: BAX12.
handbook, halfpage k
BAX12
DESCRIPTION The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
BAX12 Datasheet
