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SA3600 - Low voltage dual-band RF front-end

Description

The SA3600 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process

QUBiC2.

The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer.

Features

  • HB_MXR+_IN 5 HB_MXR.
  • _IN 6 PD1 7 GND 8 HB_VCO_OUT 9 PD2 10 GND 11 LB_VCO_OUT 12.
  • Low current consumption: LB ICC = 14.5 mA; HB ICC = 20.5 mA.
  • Outstanding low- and high-band noise figure.
  • LNAs with gain control (30 dB gain step).
  • LO input and output buffers.
  • Selectable frequency doubler.
  • On chip logic for network selection and power down.
  • Very small outline package.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
SA3601 Low voltage dual-band RF front-end
SA3603 Cellular-band low voltage front-end
SA3604 PCS-band low voltage front-end

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INTEGRATED CIRCUITS SA3600 Low voltage dual-band RF front-end Product specification Supersedes data of 1999 March 18 1999 Nov 02 Philips Semiconductors Philips Semiconductors Product specification Low voltage dual-band RF front-end SA3600 DESCRIPTION The SA3600 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process—QUBiC2. The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer has a 9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm.
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