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PPC5001T - NPN microwave power transistor

Description

APPLICATIONS Intended for use in common-collector oscillator circuits in military and professional applications up to 5 GHz.

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT447A metal ceramic flange package.

Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance handbook, halfpage PPC5001T.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance handbook, halfpage PPC5001T PINNING - SOT447A PIN 1 2 3 base emitter collector DESCRIPTION 3 APPLICATIONS Intended for use in common-collector oscillator circuits in military and professional a
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