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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMMT591A PNP BISS transistor
Product specification Supersedes data of 1999 May 21 1999 Aug 04
Philips Semiconductors
Product specification
PNP BISS transistor
FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and low power consumption are important. DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. MARKING TYPE NUMBER PMMT591A Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. MARKING CODE(1) 9B∗
Top view
handbook, halfpage
PMMT591A
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2 1 2
MAM256
Fig.