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PMMT591 - PNP Transistor

Description

PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package.

NPN complement: PMMT491A.

MARKING TYPE NUMBER PMMT591A Note 1.

Features

  • High current (max. 1 A).
  • Low collector-emitter saturation voltage ensures reduced power consumption.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT591A PNP BISS transistor Product specification Supersedes data of 1999 May 21 1999 Aug 04 Philips Semiconductors Product specification PNP BISS transistor FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and low power consumption are important. DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. MARKING TYPE NUMBER PMMT591A Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. MARKING CODE(1) 9B∗ Top view handbook, halfpage PMMT591A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.
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