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PMBT5551 - NPN high-voltage transistor

Description

NPN high-voltage transistor in a SOT23 plastic package.

PNP complement: PMBT5401.

TYPE NUMBER PMBT5551 Note 1.

Features

  • Low current (max. 300 mA).
  • High voltage (max. 160 V).

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5551 NPN high-voltage transistor Product specification Supersedes data of 1997 Jul 02 1999 Apr 15 Philips Semiconductors Product specification NPN high-voltage transistor FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • General purpose • Telephony. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401. MARKING 1 2 handbook, halfpage PMBT5551 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 TYPE NUMBER PMBT5551 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) Top view MAM255 ∗G1 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
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