Download the BUK445-60B datasheet PDF.
This datasheet also covers the BUK445-60A variant, as both devices belong to the same power mos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
Full PDF Text Transcription for BUK445-60B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK445-60B. For precise diagrams, and layout, please refer to the original PDF.
Philips Semiconductors PowerMOS transistor Product Specification BUK445-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fu...
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channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) BUK445 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 21 30 150 0.038 MAX. -60B 60 20 30 150 0.
BUK445-60B Datasheet
