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BU2530AL - Silicon Diffused Power Transistor

Description

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

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Part Number Description
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Philips Semiconductors Silicon Diffused Power Transistor Product specification BU2530AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 Tmb ≤ 25 ˚C IC = 9.0 A; IB = 1.64 A ICsat = 9.0 A; IB(end) = 1.3 A TYP. 9 3.5 MAX. 1500 800 16 40 125 5.0 4.
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