2N2219A Datasheet | Philips Semiconductors

FEATURES - High current (max. 800 m A) - Low voltage (max. 40 V). APPLICATIONS - High-speed switching - DC and VHF/UHF amplification, for 2N2219 only. 1 handbook, halfpage 2 2N2219; 2N2219A PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 DESCRIPTION NPN switching transistor in a TO-39 metal package. PNP plement: 2N2905 and 2N2905A. MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N2219 2N2219A VCEO collector-emitter voltage 2N2219 2N2219A IC Ptot h FE f T collector current (DC) total power dissipation DC current gain transition frequency 2N2219 2N2219A toff turn-off time ICon = 150 m A; IBon = 15 m A; IBoff = - 15 m A Tamb ≤ 25 °C IC = 10 m A; VCE = 10 V IC = 20 m A; VCE = 20 V; f = 100 MHz 250 300 - - - 250 MHz MHz ns open base - - - - 75 30 40 800 800 - V V m A m W open emitter - - 60 75 V V CONDITIONS MIN. MAX. UNIT 1997 Sep 03 Philips Semiconductors Product specification NPN...