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VTT9103 - .040 NPN Phototransistors

Description

A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

The chip is protected with a lens of clear epoxy.

The base connection is brought out allowing conventional transistor biasing.

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Datasheet Details

Part number VTT9103
Manufacturer PerkinElmer Optoelectronics
File Size 21.77 KB
Description .040 NPN Phototransistors
Datasheet download datasheet VTT9103 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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.040" NPN Phototransistors Epoxy Lensed TO-106 Ceramic Package VTT9102, 9103 PACKAGE DIMENSIONS inch (mm) CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package. The chip is protected with a lens of clear epoxy. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to any of PerkinElmer IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -20°C to 70°C -20°C to 70°C 100 mW 2.
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