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VTT3425LA - .025 NPN Phototransistors

Description

A small area high speed NPN silicon phototransistor in a 3 mm diameter, lensed plastic package.

The package material transmits infrared and blocks visible light.

These devices are spectrally and mechanically matched to the VTE33xxLA series of IREDs.

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Datasheet Details

Part number VTT3425LA
Manufacturer PerkinElmer Optoelectronics
File Size 22.17 KB
Description .025 NPN Phototransistors
Datasheet download datasheet VTT3425LA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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.025" NPN Phototransistors IRT Long T-1 (3 mm) Plastic Package VTT3423LA, 4LA, 5LA PACKAGE DIMENSIONS inch (mm) CASE 50A LONG T-1 (3 mm) CHIP TYPE: 25T PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor in a 3 mm diameter, lensed plastic package. The package material transmits infrared and blocks visible light. These devices are spectrally and mechanically matched to the VTE33xxLA series of IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 100°C -40°C to 100°C 50 mW 0.
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