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VTT1212 - .040 NPN Phototransistors

Description

A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted in a lensed, end looking, transparent plastic package.

These devices are spectrally and mechanically matched to the VTE12xx series of IREDs.

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Datasheet Details

Part number VTT1212
Manufacturer PerkinElmer Optoelectronics
File Size 21.49 KB
Description .040 NPN Phototransistors
Datasheet download datasheet VTT1212 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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.040" NPN Phototransistors Clear T-1¾ (5 mm) Plastic Package VTT1212, 1214 PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted in a lensed, end looking, transparent plastic package. These devices are spectrally and mechanically matched to the VTE12xx series of IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 100°C -40°C to 100°C 50 mW 0.
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