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VTT1017 - .050 NPN Phototransistors

Description

A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package.

The hermetic package offers superior protection from hostile environments.

The base connection is brought out allowing conventional transistor biasing.

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Datasheet Details

Part number VTT1017
Manufacturer PerkinElmer Optoelectronics
File Size 22.93 KB
Description .050 NPN Phototransistors
Datasheet download datasheet VTT1017 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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.050" NPN Phototransistors TO-46 Flat Window Package VTT1015, 16, 17 PACKAGE DIMENSIONS inch (mm) CASE 1 TO-46 (FLAT WINDOW) CHIP TYPE: 50T PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to the VTE10xx series of IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 110°C -40°C to 110°C 250 mW 3.
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