Datasheet4U Logo Datasheet4U.com

VTE1291W-1 - GaAlAs Infrared Emitting Diodes

General Description

This wide beam angle 5 mm plastic packaged emitter contains a double wirebonded, GaAlAs, 880 nm IRED chip.

This cost effective design is well suited for dc or high current pulse applications.

📥 Download Datasheet

Datasheet Details

Part number VTE1291W-1
Manufacturer PerkinElmer Optoelectronics
File Size 33.04 KB
Description GaAlAs Infrared Emitting Diodes
Datasheet download datasheet VTE1291W-1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package — 880 nm VTE1291W-1, W-2 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 26W T-1¾ (5 mm) WIDE ANGLE CHIP SIZE: .015" x .015" This wide beam angle 5 mm plastic packaged emitter contains a double wirebonded, GaAlAs, 880 nm IRED chip. This cost effective design is well suited for dc or high current pulse applications. This device is a UL recognized component for smoke alarm applications (UL file #S3506). ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -40°C to 100°C 200 mW 2.86 mW/°C 100 mA 1.43 mA/°C 2.