• Part: PTW09N90
  • Description: 900V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Perfect Intelligent
  • Size: 0.99 MB
Download PTW09N90 Datasheet PDF
Perfect Intelligent
PTW09N90
Features Proprietary New Planar Technology RDS(ON),typ.=1.2 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode BVDSS RDS(ON),typ. 900V 1.2Ω 9A Applications Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package TO-3P Brand Absolute Maximum Ratings ℃ TC=25 unless otherwise specified Symbol VDSS VGSS ID ℃ ID @ Tc =100 IDM EAS dv/dt TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current ℃ Continuous Drain Current @ Tc=100 Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation ℃ Derating Factor above 25 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 900 ±30 9.0 Figure 3 Figure 6 580 1000 240 2.0 300 260 Unit V A m J V/ns ℃ W/ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to...