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PE42430 - SP3T Reflective RF Switch

General Description

The PE42430 is a HaRP™-enhanced reflective SP3T RF switch developed on the UltraCMOS® process technology.

This tiny general purpose switch is ideal for WLAN and bluetooth applications in the 2.4 - 2.5 GHz bands as well as general broadband switching applications.

Key Features

  •  HaRP™-enhanced UltraCMOS® device.
  •  Low insertion loss.
  •  Typical 0.45 dB @ 1 GHz.
  •  Typical 0.55 dB @ 2.5 GHz.
  •  IIP3: Typical +66 dBm.
  •  P0.1dB Compression: Typical +30 dBm.
  •  Excellent ESD tolerance of 4500V HBM and 250V MM on all ports.
  •  No external VDD required. VDD is derived from switch control inputs.
  •  Package type: 8-lead 1.5 x 1.5 mm DFN Figure 1. Functional Diagram RFC ESD RF1 ESD RF2 ESD RF3 ESD CMOS Control/Driver and ESD V1 V2 V3 71-0086.

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Product Description The PE42430 is a HaRP™-enhanced reflective SP3T RF switch developed on the UltraCMOS® process technology. This tiny general purpose switch is ideal for WLAN and bluetooth applications in the 2.4 - 2.5 GHz bands as well as general broadband switching applications. It is comprised of three RF ports and has low insertion loss and high isolation. An on-chip CMOS decode logic facilitates a three-pin CMOS control interface. Unlike competitive solutions, there is no need for blocking capacitors when using the PE42430. pSemi’s HaRP™ technology enhancements deliver high linearity and exceptional harmonics performance. It is an innovative feature of the UltraCMOS® process, providing performance superior to GaAs with the economy and integration of conventional CMOS.