q q
Unit : mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Low forward voltage V F Fast reverse recovery time trr
16.7±0.3
q
High reverse voltage VR
7.5±0.2
ø3.1±0.1
4.2±0.2
1.4±0.1 1.3±0.2 0.8±0.1 0.5 -0.1
+0.2
14.0±0.5
Solder Dip
4.0
2.54±0.25
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature.
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Fast Recovery Diodes (FRD)
MA111
MA653
Silicon planer type (cathode common)
0.7±0.1
For switching s Features
q q
Unit : mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Low forward voltage V F Fast reverse recovery time trr
16.7±0.3
q
High reverse voltage VR
7.5±0.2
ø3.1±0.1
4.2±0.2
1.4±0.1 1.3±0.2 0.8±0.1 0.5 -0.1
+0.2
14.0±0.5
Solder Dip
4.0
2.54±0.25
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature
* Sine half wave : 10ms/cycle
5.08±0.
MA653 Datasheet
