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K3995 - Silicon N-Channel MOSFET

Key Features

  • s.
  • Medium breakdown voltag: VDSS = 200 V, ID = 30 A.
  • Low ON resistance, optimum for PDP panel drive.
  • Package.
  • Code TO-220C-G1.
  • Marking Symbol: K3995.
  • Pin Name 1. Gate 2. Drain 3. Source Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current.
  • 1 VDSS VGSS ID IDP Drain reverse current IDR Peak drain reverse current.
  • 1 IDRP Avalanche energy capability.
  • 2 Drain power dissipation Junction te.

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Datasheet Details

Part number K3995
Manufacturer Panasonic
File Size 359.57 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet K3995 Datasheet

Full PDF Text Transcription for K3995 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3995. For precise diagrams, and layout, please refer to the original PDF.

This product complies with the RoHS Directive (EU 2002/95/EC). Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP  F...

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annel enhancement MOSFET For high speed switching circuits For PDP  Features  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive  Package  Code TO-220C-G1  Marking Symbol: K3995  Pin Name 1. Gate 2. Drain 3.

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