1.1±0.1 0.75±0.1
0.85±0.1 0.4±0.1
2.3±0.2
4.6±0.4 2
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC 100±15 100±15 5 8 4
1
3
Ratings
Unit V V V A A
1:Base 2:Collector 3:Emitter I Type Package Unit: mm
0 to 0.15
Collector to emitter voltage Emitter to base voltage Peak collector current Collector current
Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
PC Tj
Tstg
s
Electrical Characteristics (TC=25˚C)
Parameter Symbol.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
D2209. For precise diagrams, tables, and layout, please refer to the original PDF.
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Power Transistors
2SD2209
Silicon NPN triple diffusion planar type Darlington
7.0±0.3 3.5±0.2
Unit: mm
For power amplification and switching
7.2±0.3 0.8±0.2
3.0±0.2
1.0±0.2
M Di ain sc te on na tin nc ue e/ d
q
I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.0 –0.
+0.3
s Features
1.1±0.1 0.75±0.1
0.85±0.1 0.4±0.1
2.3±0.2
4.6±0.4 2
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC 100±15 100±15 5 8 4
1
3
Ratings
Unit V V V A A
1:Base 2:Collector 3:Emitter I Type Package Unit: mm
0 to 0.
D2209 Datasheet
