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Transistor
2SC829
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
5.0±0.2 4.0±0.2
s Features
q
Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25˚C)
Ratings 30 20 5 30 400 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C
13.5±0.5
5.1±0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1
1.27
+0.2
1 2 3
2.3±0.2
2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
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C829 Datasheet
