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C3980. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SC3980 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3....
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peed switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 / ■ Absolute Maximum Ratings TC = 25°C e e) Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip c e.
C3980 Datasheet
