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C3935. For precise diagrams, and layout, please refer to the original PDF.
Transistors 2SC3935 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (0.425) 0.3+–00..01 ■ Features • High transition frequency fT 3 ...
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ixing (0.425) 0.3+–00..01 ■ Features • High transition frequency fT 3 • Small collector output capacitance (Common base, input open cir- 0.15+–00..0150 1.25±0.10 2.1±0.1 5˚ cuited) Cob and reverse transfer capacitance (Common base) Crb • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e e) Collector-base voltage (Emitter open) VCBO 15 0.2±0.1 V c e. d typ Collector-emitter voltage (Base open) VCEO 10 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 0 t
C3935 Datasheet
