Click to expand full text
Power Transistors
2SC3496, 2SC3496A
Silicon NPN triple diffusion planar type
For power switching
8.5±0.2
Unit: mm
3.4±0.3
■ Features
6.0±0.2
1.0±0.1
3.0–+00..24 4.4±0.5
14.4±0.5
10.0±0.3 1.5±0.1
• High-speed switching
1.5–+00.4
• High collector-base voltage (Emitter open) VCBO
4.4±0.5 2.0±0.5
• Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
0 to 0.4
0.8±0.1 2.54±0.3 1.4±0.1
R = 0.5 R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5) (6.0) 1.3
(7.6) (1.5)
e Collector-base voltage 2SC3496 VCBO
900
V
pe) (Emitter open)
2SC3496A
1 000
nc d ge.
C3496 Datasheet
