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B1531 - 2SB1531

Features

  • q q q 10.5±0.5 4.0±0.1 2.0±0.1 Parameter Symbol VCBO VCEO VEBO ICP IC Ratings.
  • 130.
  • 110.
  • 5 Unit V V V A A 12.5 s Absolute Maximum Ratings Collector to base voltage (TC=25˚C) Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature PC Tj Tstg.
  • 55 to +150 s Electrical Characteristics Parameter Collector cutoff current Emitter cuto.

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Part Number Description
B1592 2SB1592

Full PDF Text Transcription

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Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm 15.0±0.5 13.0±0.5 4.5±0.2 M Di ain sc te on na tin nc ue e/ d 4.0±0.1 s Features q q q 10.5±0.5 4.0±0.1 2.0±0.1 Parameter Symbol VCBO VCEO VEBO ICP IC Ratings –130 –110 –5 Unit V V V A A 12.
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