Power Transistors
2SB967
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification
7.3± 0.1 1.8± 0.1
6.5± 0.1 5.3± 0.1 4.35± 0.1
2.3± 0.1 0.5± 0.1
2.5± 0.1
0.8max
q q q
Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter saturation voltage VCE(sat) Large collector current IC
0.93±0.1
1.0± 0.1 0.1± 0.05 0.5± 0.1
0.75± 0.1 2.3± 0.1 4.6± 0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage www.DataSheet4U.com Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1
2
3
(Ta=25˚C)
Ratings –27 –18 –7 –8 –5 20 150 –55 to +150 Unit V V V A A W
0.