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High Frequency FETs
3SK144
Silicon N-Channel 4-pin MOS FET
For VHF high-gain and low-noise amplification
unit: mm
+0.2
2.8 –0.3
s Features
0.65±0.15
+0.2
1.5 –0.3
0.65±0.15
q Low noise-figure (NF)
q Large power gain PG
0.5R
2.9±0.2 1.9±0.2 0.95 0.95
q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
4
1
s Absolute Maximum Ratings (Ta = 25°C)
3
2
/ Parameter
Symbol Ratings
Unit
Drain to Source voltage
e e) Gate 1 to Source voltage c . typ Gate 2 to Source voltage n d tage ued Drain current
le s ntin Allowable power dissipation
a e cyc isco Channel temperature
life d, d Storage temperature
VDS VG1S VG2S ID PD Tch Tstg
+0.2
1.1 –0.1 0.8
0 to 0.1
+0.1
0.16 –0.06
+0.1
0.4 –0.
3SK144 Datasheet
