Datasheet4U Logo Datasheet4U.com

XN6435 - Silicon PNP epitaxial planer transistor

Features

  • 0.5.
  • 0.05 +0.1 +0.1 1 Composite Transistors PT.
  • Ta 500 XN6435 IC.
  • VCE.
  • 30.
  • 100 VCE(sat).
  • IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 Total power dissipation PT (mW) Collector current IC (mA) 400.
  • 25 IB=.
  • 250µA.
  • 200µA.
  • 15.
  • 150µA.
  • 100µA.
  • 50µA.
  • 30.
  • 10.
  • 3.
  • 1.
  • 0.3.
  • 0.1.
  • 0.03.
  • 0.01.
  • 0.1.

📥 Download Datasheet

Datasheet Details

Part number XN6435
Manufacturer Panasonic
File Size 34.10 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet XN6435 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Panasonic

Part Number Description
XN6401 Silicon PNP epitaxial planer transistor
XN6111 Silicon PNP epitaxial planer transistor
XN6112 Silicon PNP epitaxial planer transistor
XN6113 Silicon PNP epitaxial planer transistor
XN6114 Silicon PNP epitaxial planer transistor

Full PDF Text Transcription

Click to expand full text
Composite Transistors XN6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SA1022 × 2 elements 1.1–0.1 0.4±0.
Published: |