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XN4216 - Silicon NPN epitaxial planer transistor

Features

  • +0.1 +0.1 1 Composite Transistors PT.
  • Ta 500 XN4216 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE 160 VCE(sat).
  • IC 100 hFE.
  • IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE 350 Ta=75˚C 300 250.
  • 25˚C 200 150 100 50 0 25˚C Collector current IC (mA) 12.

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Datasheet Details

Part number XN4216
Manufacturer Panasonic
File Size 32.72 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XN4216 Datasheet

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Full PDF Text Transcription

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Composite Transistors XN4216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.
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