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XN4112 - Silicon PNP epitaxial planer transistor

Features

  • 0.5.
  • 0.05 +0.1 +0.1 1 Composite Transistors PT.
  • Ta 500 XN4112 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE.
  • 160.
  • 140 Ta=25˚C IB=.
  • 1.0mA.
  • 0.9mA.
  • 0.8mA.
  • 0.7mA.
  • 0.6mA.
  • 0.5mA.
  • 80.
  • 60.
  • 40.
  • 20 0 0.
  • 2.
  • 4.
  • 6.
  • 8.
  • 10.
  • 12.
  • 0.4mA.
  • 0.3mA.
  • 0.2mA.

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Datasheet Details

Part number XN4112
Manufacturer Panasonic
File Size 33.57 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet XN4112 Datasheet

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Full PDF Text Transcription

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Composite Transistors XN4112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.
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