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XN1509 - Silicon NPN epitaxial planer transistor

Features

  • 1 Composite Transistors PT.
  • Ta 240 120 Ta=25˚C XN1509 IC.
  • VCE 60 VCE=10V 50 25˚C Ta=75˚C 40.
  • 25˚C IC.
  • VBE Total power dissipation PT (mW) 200 100 Collector current IC (mA) 160 80 IB=300µA 250µA 200µA 150µA 100µA Collector current IC (mA) 120 60 30 80 40 20 40 20 50µA 10 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(.

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Datasheet Details

Part number XN1509
Manufacturer Panasonic
File Size 31.82 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XN1509 Datasheet

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Full PDF Text Transcription

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Composite Transistors XN1509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SC4561 × 2 elements 0.8 s Basic Part Number of Element +0.
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