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XN1401 - Silicon PNP epitaxial planer transistor

Features

  • 1 Composite Transistors PT.
  • Ta 500.
  • 60 Ta=25˚C IB=.
  • 300µA.
  • 250µA.
  • 40.
  • 200µA.
  • 30.
  • 150µA XN1401 IC.
  • VCE.
  • 60 VCE=.
  • 5V Ta=25˚C.
  • 50 IC.
  • I B Total power dissipation PT (mW) Collector current IC (mA) Collector current IC (mA) 400.
  • 50.
  • 40 300.
  • 30 200.
  • 20.
  • 100µA.
  • 20 100.
  • 10.
  • 50µA.
  • 10 0 0 40 80 120 160 0 0.

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Datasheet Details

Part number XN1401
Manufacturer Panasonic
File Size 42.46 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet XN1401 Datasheet

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Full PDF Text Transcription

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Composite Transistors XN1401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SB709A × 2 elements 0.8 s Basic Part Number of Element +0.
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