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XN121E - Silicon NPN epitaxial planer transistor

Features

  • 1 Composite Transistors PT.
  • Ta 500 XN121E Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE 60 VCE(sat).
  • IC 100 hFE.
  • IC IC/IB=10 Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.1 25˚C 50 Forward current transfer ratio hFE IB=1.0mA 0.7mA Ta=25˚C 0.9mA 0.6mA 0.8mA 160 VCE=10V Collector current IC (mA) 120 Ta=75˚C 25˚C.
  • 25˚C 40 0.3mA 0.4mA.

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Datasheet Details

Part number XN121E
Manufacturer Panasonic
File Size 33.94 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XN121E Datasheet

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Full PDF Text Transcription

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Composite Transistors XN121E Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN121E × 2 elements 0.8 s Basic Part Number of Element +0.
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