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XN111M - PNP epitaxial planer transistor

Features

  • 1 Composite Transistors PT.
  • Ta 500 XN111M Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE 240.
  • 10 VCE(sat).
  • IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 500 hFE.
  • IC VCE=.
  • 10V.
  • 3.
  • 1.
  • 0.3.
  • 0.1.
  • 0.03.
  • 0.01 25˚C Ta=75˚C 200 Forward current transfer ratio hFE Collector current IC (mA) 160 IB=.
  • 1.

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Datasheet Details

Part number XN111M
Manufacturer Panasonic
File Size 34.13 KB
Description PNP epitaxial planer transistor
Datasheet download datasheet XN111M Datasheet

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Full PDF Text Transcription

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Composite Transistors XN111M PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN211M × 2 elements 0.8 s Basic Part Number of Element +0.
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