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UN611D - Silicon PNP epitaxial planer transistor

General Description

10 12 3 10 30 100 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB 6 IO VIN

Key Features

  • 0.15 0.7 4.0 1 Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L s Electrical Characteristics Parameter Collector cutoff current UN6111 UN6112/6114/611E/611D Emitter cutoff current UN6113 UN6115/6116/6117/6110 UN611F/611H UN6119 UN6118/611L Collector to base voltage Collector to emitter voltage UN6111 UN6112/611E Forward current transfer ratio UN6113/6114 UN6115.
  • /6116.
  • /6117.
  • /6110.
  • UN611F/611D/6119/611H UN6118/6.

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Datasheet Details

Part number UN611D
Manufacturer Panasonic
File Size 181.81 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet UN611D Datasheet

Full PDF Text Transcription for UN611D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UN611D. For precise diagrams, and layout, please refer to the original PDF.

Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L Silicon PNP epitaxial planer transistor For digital circu...

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1F/611H/611L Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q s Resistance by Part Number q q q q q q q q q q q q q q q 0.45–0.05 +0.1 UN6111 UN6112 UN6113 UN6114 UN6115 UN6116 UN6117 UN6118 UN6119 UN6110 UN611D UN611E UN611F UN611H UN611L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 1 2 3 0.45–0.05 2.5±0.5 2.5±0.5 +0.1 1 : Emitter 2 : Collector 3 : Base MT-1 Type Package Internal Connection R1 2.5±0.

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