UN211V - Silicon PNP epitaxial planer transistor

Product Overview

Panasonic Semiconductor

Datasheet Details

Part number	UN211V
Manufacturer	Panasonic Semiconductor
File Size	235.97 KB
Description	Silicon PNP epitaxial planer transistor
Datasheet	UN211V Datasheet
Additional preview pages of the UN211V datasheet.

Product details

Description

2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN2115 IC VCE 160 100 VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE IC VCE= 10V Collector current IC (mA) 120 100 80 60 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.

Features

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 0.95 2.9.
0.05 1 1.9±0.2 +0.2 0.95 3 1.45 0 to 0.1 2 q q q q q q q q q q q q q q q q q q q q UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 UN2119 UN2110 UN211D UN211E UN211F UN211H UN211L UN211M UN211N UN211T UN211V UN211Z Marking Symbol (R1) 6A 10kΩ 6B 2.

📁 Similar Datasheet

UN2114 - SILICON PNP DIGITAL TRANSISTOR (LZG)
UN202M - Disc Ceramic Capacitors (MALLORY)
UN2488 - NPN SLICON POWER TRANSISTOR (UNISONIC TECHNOLOGIES)
UN2803 - EIGHT DARLINGTON ARRAYS (UTC)
UN2E8-150H - 2-Electrode Gas Discharge Tube (SOCAY)
UN2E8-150HL - 2-Electrode Gas Discharge Tube (SOCAY)
UN2E8-150HSMD - 2-Electrode Gas Discharge Tube (SOCAY)
UN2E8-150M - 2-Electrode Gas Discharge Tube (SOCAY)

Other Datasheets by Panasonic Semiconductor

UN2110 - Silicon PNP epitaxial planer transistor
UN2111 - Silicon PNP epitaxial planer transistor
UN2112 - Silicon PNP epitaxial planer transistor
UN2113 - Silicon PNP epitaxial planer transistor
UN2114 - Silicon PNP epitaxial planer transistor
UN2115 - Silicon PNP epitaxial planer transistor

Published: Apr 17, 2005 |