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Power Transistors
2SB1435
Silicon PNP epitaxial planar type
For low-frequency output amplification
7.5±0.2 3.8±0.2
Unit: mm
4.5±0.2
■ Features
• Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing automatic insertion with radial taping
10.8±0.2
0.65±0.1 2.5±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
0.8 C
16.0±1.0
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −50 −5 −2 −3 1.5 150 −55 to +150 Unit V V V A A W °C °C
0.5±0.1 0.8 C 1 2 3 2.05±0.2
0.
SJD00074BED Datasheet
