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Power Transistor Arrays (F-MOS FETs)
PUB4701
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive
unit: mm
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
1.65±0.2 9.5±0.2 8.0
25.3±0.2
4.0±0.2
4.4±0.5
0.5±0.15 1.0±0.25 2.54±0.2 9!2.54=22.86±0.25
0.8±0.25 0.5±0.15
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 150 ±20 ±6 ±12 22.5 15 3.5 150 −55 to +150 Unit V V A A mJ W °C °C
C1.5±0.
PUB4701 Datasheet
