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Power Transistor Arrays (F-MOS FETs)
PU7457
Silicon N-Channel Power F-MOS FET (with built-in zener diode)
s Features
q High avalanche energy capacity q High electrostatic breakdown voltage q No secondary breakdown q High breakdown voltage, large allowable power dissipation q Allowing Low-voltage drive
25.3±0.2 1.65±0.2 9.5±0.2 8.0
unit: mm
4.0±0.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
4.4±0.5
0.5±0.15 1.0±0.25 2.54±0.2 9!2.54=22.86±0.25
0.8±0.25 0.5±0.15
C1.5±0.
PU7457 Datasheet
