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PU3117 - (PUA3117) Silicon NPN triple diffusion planar type

Download the PU3117 datasheet PDF. This datasheet also covers the PU3117-1 variant, as both devices belong to the same (pua3117) silicon npn triple diffusion planar type family and are provided as variant models within a single manufacturer datasheet.

Features

  • High forward current transfer ratio hFE.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • NPN 3 elements 9.5±0.2 1.65±0.2 8.0±0.2 0.8±0.25 Solder Dip 5.3±0.5 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 7 × 2.57 = 17.78±0.25 C 1.5±0.5.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector pow.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PU3117-1_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PU3117
Manufacturer Panasonic
File Size 89.20 KB
Description (PUA3117) Silicon NPN triple diffusion planar type
Datasheet download datasheet PU3117 Datasheet

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Full PDF Text Transcription

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Power Transistor Arrays PUA3117 (PU3117) Silicon NPN triple diffusion planar type For power amplification and switching 20.2±0.3 Unit: mm 4.0±0.2 ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • NPN 3 elements 9.5±0.2 1.65±0.2 8.0±0.2 0.8±0.25 Solder Dip 5.3±0.5 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 7 × 2.57 = 17.78±0.25 C 1.5±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 60 6 3 6 1 15 2.
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