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PNA-1401LF - Silicon NPN Phototransistors

Download the PNA-1401LF datasheet PDF. This datasheet also covers the PNA1401LF variant, as both devices belong to the same silicon npn phototransistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ. ) Fast response : tr, tf = 3 µs (typ. ) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) ø5.75 max. Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Oper.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PNA1401LF_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors PNA1401LF Unit : mm ø4.6±0.15 Glass window For optical control systems Features Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) ø5.75 max.
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