LN671 - GaAlAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LN671
Manufacturer	Panasonic Semiconductor
File Size	43.24 KB
Description	GaAlAs Infrared Light Emitting Diode
Datasheet	LN671 Datasheet
Additional preview pages of the LN671 datasheet.

High-power output, high-efficiency : PO = 10 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 30 ns(typ. ) Small plastic package Epin ø3.2 13.5±0.1 4.0±0.1 1.0±0.3 1.0±0.3 4-0.6 +0.1.
0.2 1.0±0.1 4.3 max. 0.2 +0.1.
0.05 4-0.5±0.15 1 10˚ 2 10˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
5˚ Symbol PD IF IFP.

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Published: Mar 22, 2005 |