LN66 - GaAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LN66
Manufacturer	Panasonic Semiconductor
File Size	47.61 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN66 Datasheet
Additional preview pages of the LN66 datasheet.

High-power output, high-efficiency : PO = 8 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ. ) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse volta.

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Published: Mar 22, 2005 |