LN58 - GaAs Infrared Light Emitting Diode

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Panasonic Semiconductor

Part number	LN58
Manufacturer	Panasonic Semiconductor
File Size	44.25 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN58 Datasheet
Additional preview pages of the LN58 datasheet.

High-power output, high-efficiency : PO = 3.5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small size, thin side-view type package 3.9±0.3 Not soldered ø2.4 4.5±0.3 1.2 2.9±0.25 0.9 1.7±0.2 0.8 12.8 min. 2.8 2.4 1.5 2-1.2±0.3 2-0.45±0.15 1 2.54 R1.2 2 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operat.

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Published: Mar 22, 2005 |