LN184 - GaAlAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LN184
Manufacturer	Panasonic Semiconductor
File Size	41.85 KB
Description	GaAlAs Infrared Light Emitting Diode
Datasheet	LN184 Datasheet
Additional preview pages of the LN184 datasheet.

High-power output, high-efficiency : PO = 5 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 20 ns(typ. ) Infrared light emission close to monochromatics light : λP = 880 nm (typ. ) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 4.5±0.2 2.0 (0.29) ,,, ø4.6±0.15 1.0 max. Unit : mm Glass window Spherical lens 12.7 min. (0.4) 2-ø0.45±0.05 2.45±0.25 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forw.

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Other Datasheets by Panasonic Semiconductor

Published: Mar 22, 2005 |