LN151L - GaAs Infrared Light Emitting Diodes

Product Overview

Panasonic Semiconductor

Part number	LN151L
Manufacturer	Panasonic Semiconductor
File Size	40.94 KB
Description	GaAs Infrared Light Emitting Diodes
Datasheet	LN151L Datasheet
Additional preview pages of the LN151L datasheet.

High-power output, high-efficiency : PO = 7.5 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ. ) LN151F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Narrow directivity, suitable for effective use of radiant power (LN151L) Wide directivity, matched for external optical systems (LN151F) TO-18 standard type package 2 1 ø5.75 ma.

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Other Datasheets by Panasonic Semiconductor

Published: Mar 22, 2005 |