LN151F - GaAs Infrared Light Emitting Diodes

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Panasonic Semiconductor

Part number	LN151F
Manufacturer	Panasonic Semiconductor
File Size	40.94 KB
Description	GaAs Infrared Light Emitting Diodes
Datasheet	LN151F Datasheet
Additional preview pages of the LN151F datasheet.

High-power output, high-efficiency : PO = 7.5 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ. ) LN151F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Narrow directivity, suitable for effective use of radiant power (LN151L) Wide directivity, matched for external optical systems (LN151F) TO-18 standard type package 2 1 ø5.75 ma.

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Other Datasheets by Panasonic Semiconductor

Published: Mar 22, 2005 |