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B949 - 2SB949

Features

  • 16.7±0.3 7.5±0.2 q High foward current transfer ratio hFE q High-speed switching q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB949 base voltage 2SB949A VCBO.
  • 60.
  • 80 V 14.0±0.5 Solder Dip 4.0 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2.
  • 0.1 2.54±0.25 Collector to 2SB949 emitter voltage 2SB949A Emitter to base voltage Peak collector current Col.

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Full PDF Text Transcription

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Power Transistors 2SB949, 2SB949A Silicon PNP epitaxial planar type Darlington 0.7±0.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 s Features 16.7±0.3 7.5±0.2 q High foward current transfer ratio hFE q High-speed switching q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB949 base voltage 2SB949A VCBO –60 –80 V 14.0±0.5 Solder Dip 4.0 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.
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